| Terahertz Radiation from Large Aperture Bulk Semi-insulating GaAs Photoconductive Dipole Antenna |
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| 作者姓名： | 施卫 贾婉丽 侯磊 许景周 张希成 |
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| 作者单位： | [1]DepartmentofAppliedPhysics,Xi＇anUniversityofTechnology,Xi＇an710048 [2]RensselaerPolytechnicInstitute,Troy,NY12180,USA |
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| 摘 要： | We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3mm between two Au/Ge/Ni electrodes, triggered by 80Ohm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied, voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation efficiency is significantly higher than that of a normal GaAs dipole antenna.
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| 关 键 词： | 太赫辐射 砷化镓材料 超快激光脉冲 光电导偶极天线 半导体材料 |
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