| Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation |
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| 作者姓名： | 梁琰 董桂芳 胡远川 胡雁 王立铎 邱勇 |
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| 作者单位： | [1]KeyLabofOrganicOptoelectronics＆MolecularEngineeringofMinistryofEducation,TsinghuaUniversity,Beijing100084 [2]DepartmentofChemistry,TsinghuaUniversity,Beijing100084 |
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| 摘 要： | Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate) as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.
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| 关 键 词： | 晶体管 感光底层 薄胶片 门电极 光阻材料 |
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