| Characterization of Defects in Chemical Vapour Deposited Diamonds |
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| 作者姓名： | 张明龙 夏义本 王林军 顾蓓蓓 |
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| 作者单位： | SchoolofMaterialsScienceandEngineering,ShanghaiUniversity,Shanghai200072 |
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| 摘 要： | Room-temperature Raman and PL spectra, photocurrent (PC) and thermally stimulated current (TSC) were measured to investigate the mid-gap defects in diamonds grown by using a hot-filament chemical vapour deposition (CVD) technique. The Si-V]^0 centres caused by the Si-C bonds in diamond grains and at grain boundaries are located at 1.68eV. We firstly detect the level 1.55eV by using PL and it is tentatively attributed to the zero-phonon luminescence line or vibronic band of the Si-V]^0 induced by the Si-O bonds. The 2.7-3.2eV and 1.9-2.1 eV PC peaks were detected and discussed. The IN-V] complex may be attributed to these defect levels.Some shallow energy levels lower than 1.0eV were also observed in the CVD diamond.
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| 关 键 词： | 化学真空沉积 宝石人工合成 晶体生长 半导体能带隙 |
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