| A Comparison between AIN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors |
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| 作者姓名： | 胡卫国 刘祥林 张攀峰 赵凤嫒 焦春美 魏鸿源 张日清 吴洁君 丛光伟 潘毅 |
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| 作者单位： | [1]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Department of Chemistry, Nanjing University, Nanjing 210093 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60376013. |
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| 摘 要： | Aluminium nitride （AIN） films grown with dimethylethylamine Mane （DMEAA） are compared with the ones grown with trimethylaluminium （TMA）. In the high-resolution x-ray diffraction Ω scans, the full width at half maximum （FWHM） of （0002） AIN films grown with DMEAA is about 0.70 deg, while the FWHM of （0002） AIN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AIN films grown with DMEAA is 47.4nm, and grown with TMA is 69.4nm. Although using DMEAA as the aluminium precursor cannot improve the AIN crystal quality, AIN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AIN film at low growth temperatures.
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| 关 键 词： | 氮化铝 薄膜 X射线衍射 形态学 |
| 修稿时间： | 2006-09-26 |
A Comparison between AIN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors |
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| HU Wei-Guo, LIU Xiang-Lin, ZHANG Pan-Feng, ZHAO Feng-Ai, JIiO Chun-Mei, WEI Hong-Yuan, ZHANG Ri-Qing, WU Jie-Jun, CONG Guang-Wei, PAN Yi.A Comparison between AIN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors[J].Chinese Physics Letters,2007,24(2):516-519. |
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| Authors: | HU Wei-Guo LIU Xiang-Lin ZHANG Pan-Feng ZHAO Feng-Ai JIiO Chun-Mei WEI Hong-Yuan ZHANG Ri-Qing WU Jie-Jun CONG Guang-Wei PAN Yi |
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| Affiliation: | 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ; 2Department of Chemistry, Nanjing University, Nanjing 210093 |
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