| Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures |
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| 作者姓名： | 王彩凤 李清山 吕磊 张立春 齐红霞 陈厚 |
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| 作者单位： | [1]Department of Physics, Qufu Normal University, Shandong 273165 [2]Department of Physics, Ludong University, Shandong 264025 [3]School of Chemistry and Materials Science, Ludong University, Shandong 264025 |
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| 基金项目： | Supported by the Natural Science Foundation of Shandong Province under Grant No Y2002A09. |
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| 摘 要： | ZnS films are deposited by pulsed laser deposition on porous silicon （PS） substrates formed by electrochemical anodization of p-type （100） silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS （111） direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot.
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| 关 键 词： | 结构学 光学 电子学 硅元素 异质结构 |
| 收稿时间： | 2006-9-5 |
| 修稿时间： | 2006-09-05 |
Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures |
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| WANG Cai-Feng,LI Qing-Shan,LV Lei,ZHANG Li-Chun,QI Hong-Xia,CHEN Hou.Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures[J].Chinese Physics Letters,2007,24(3):825-827. |
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| Authors: | WANG Cai-Feng LI Qing-Shan LV Lei ZHANG Li-Chun QI Hong-Xia CHEN Hou |
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| Affiliation: | 1Department of Physics, Qufu Normal University, Shandong 273165; 2Department of Physics, Ludong University, Shandong 264025; 3School of Chemistry and Materials Science, Ludong University, Shandong 264025 |
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| Abstract: | |
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| Keywords: | 78 55 Et 78 55 Mb 78 67 Pt |
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