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Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
作者姓名:贺春元  高春晓  李明  郝爱民  黄晓伟  张东梅  于翠玲  王月
作者单位:[1]State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012 [2]Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 40473034, 40404007, 10574055, and 50532020, and the National Basic Research Programme of China under Grant No 2005CB724404. To whom correspondence should be addressed.
摘    要:

关 键 词:电子传输  高压  适度温度  电阻率  测量方法
收稿时间:2006-11-15
修稿时间:2006-11-15

Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
HE Chun-Yuan,GAO Chun-Xiao,LI Ming,HAO Ai-Min,HUANG Xiao-Wei,ZHANG Dong-Mei,YU Cui-Ling,WANG Yue.Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell[J].Chinese Physics Letters,2007,24(4):1070-1072.
Authors:HE Chun-Yuan  GAO Chun-Xiao  LI Ming  HAO Ai-Min  HUANG Xiao-Wei  ZHANG Dong-Mei  YU Cui-Ling  WANG Yue
Affiliation:1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012 2Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
Abstract:In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.
Keywords:74  25  Fy  07  35  +k  81  05  Dz
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