| Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions |
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| 作者姓名： | 刘存业 徐庆宇 |
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| 作者单位： | [1]DepartmentofPhysics,SouthwestChinaNormalUniversity,Chongqing400715 [2]NationalLaboratoryofSolidStateMicrostructures,NanjingUniversity,Nanjing210093 |
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| 摘 要： | Anomalous transport behaviour,i.e.the dependence of the tunnel resistance on the injection current,has been discovered in Ta/Co/Al2O3/FeNi tunnel junctions.The zero-field voltage-current characteristic of the magnetic tunnelling junction obeys the transport principle of the normal tunnel junction at low injection current,but it exhibits a negative resistance behaviour when the injection current is raised to the break-over current level.The physics of the restorable electric breakdown has been initially studied.
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| 关 键 词： | 磁性多层材料 磁隧道连接 注入电流 隧道电阻 |
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