| Microstructure Study on Heterostructures of AIInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD |
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| 作者姓名： | 王欢 姚淑德 潘尧波 于彤军 张国义 |
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| 作者单位： | [1]Department of Technical Physics, School of Physics, Peking University, Beijing 100871 [2]State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beiiing 100871 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 10375004 and 10575007. |
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| 摘 要： | A quaternary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with a thick （〉 1μm） GaN intermediate layer. The compositions of In and A1 are determined by Rutherford backscattering （RBS）. The low ratio between the channelling yield and random yield according to the spectra of RBS/C （χmin = 1.44%） means that the crystal quality of the AllnGaN film is perfect. The perpendicular and the parallel elastic strain of the AIlnGaN layer, e^⊥=-0.15% and e^//= 0.16%, respectively, are derived using a combination of XRD and RBS/channelling.
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| 关 键 词： | 微结构学习 反散射 化学蒸汽沉积 基底 平行弹性应力 |
| 收稿时间： | 2006-06-13 |
| 修稿时间： | 2006-06-13 |
Microstructure Study on Heterostructures of AIInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD |
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| WANG Huan, YAO Shu-De, PAN Yao-Bo, YU Tong-Jun, ZHANG Guo-Yi.Microstructure Study on Heterostructures of AIInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD[J].Chinese Physics Letters,2006,23(9):2510-2512. |
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| Authors: | WANG Huan YAO Shu-De PAN Yao-Bo YU Tong-Jun ZHANG Guo-Yi |
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| Affiliation: | 1.Department of Technical Physics, School of Physics, Peking University, Beijing 100871;2. State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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