| Characteristics of THz Emission from GaAs Crystal Excited by 400 nm and 800 nm Optical Pulses |
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| 作者姓名： | 杨玉平 徐新龙 严伟 汪力 |
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| 作者单位： | LaboratoryofOpticalPhysics,BeijingNationalLaboratoryforCondensedMatterPhysics,InstituteofPhysics,ChineseAcademyofSciences,POBox603,Beijing100080 |
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| 摘 要： | THz emission spectroscopy is used to study the generation mechanism dependent behaviour of terahertz (THz) electromagnetic waves from the GaAs crystal under excitation by 40Ohm and 800hm femtosecond (fs) pulses, respectively. The wavelength dependence of the emission spectrum under two types of THz generation mechanis msis analysed. Under the optical rectification mechanism, a slight enhancement of the spectral amplitude in the high-frequency regime is observed in a GaAs(l10) crystal by the excitation of a 400-nm optical pulse compared with that of 800nm. Whereas an obvious red shift of the amplitude spectrum occurs in the GaAs(100) sample under the transient photoconduction mechanism. These phenomena are explained in detail by the duration of the optical pump pulse and the band structure of GaAs, respectively.
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| 关 键 词： | 光学脉冲 光谱学 电磁波 光电导性 |
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