| Fabrication of GaN Nanorods in a Large Scale on Si（111）Substrate by Ammoniating Technique |
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| 引用本文： | 艾玉杰,薛成山,孙莉莉,孙传伟,庄惠照,王福学,陈金华,李红.Fabrication of GaN Nanorods in a Large Scale on Si（111）Substrate by Ammoniating Technique[J].中国物理快报,2006,23(11):3052-3054. |
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| 作者姓名： | 艾玉杰 薛成山 孙莉莉 孙传伟 庄惠照 王福学 陈金华 李红 |
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| 作者单位： | [1]Institute of Semiconductors, Shandong Normal University, Jinan 250014 [2]School of Information Science and Engineering, Jinan University, Jinan 250022 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 90201025 and 90301002. |
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| 摘 要： | GaN nanorods in a large scale have been synthesized on Si （111） substrates by ammoniating Ga2O3/Mg films under flowing ammonia atmosphere at the temperature of 1000℃ for 15 min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and highresolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200 nm to 600 nm.
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| 关 键 词： | 硅衬底 氨化合技术 薄膜 氨气 电子显微术 |
| 收稿时间： | 2006-08-01 |
| 修稿时间： | 2006-08-01 |
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