| Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique |
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| 作者姓名： | Raid A. Ismail Ibrahim Ramadhan Aseel Mustafa |
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| 作者单位： | [1]Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq [2]Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq |
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| 摘 要： | Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around （1：1 × 10^-5Ω^-1cm^-1） at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.
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| 关 键 词： | Cu2O 薄膜 热氧化反应 光学能隙带 光谱 电子传导性 |
| 收稿时间： | 2005-07-19 |
| 修稿时间： | 2005-07-19 |
Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique |
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| Raid A. Ismail Ibrahim Ramadhan Aseel Mustafa.Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique[J].Chinese Physics Letters,2005,22(11):2977-2979. |
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| Authors: | Raid;A;Ismail;Ibrahim;Ramadhan;Aseel;Mustafa |
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