| Investigation into the Energy Band Diagram and Charge Distribution in A1GaN／GaN Double Heterostructures by Self-Consistent Poisson-Schroedinger Calculations |
| |
| 引用本文： | 姬小利,陈璠,江若琏,周建军,文博,韩平,谢自力,张荣,郑有炓.Investigation into the Energy Band Diagram and Charge Distribution in A1GaN／GaN Double Heterostructures by Self-Consistent Poisson-Schroedinger Calculations[J].中国物理快报,2005,22(2):454-456. |
| |
| 作者姓名： | 姬小利 陈璠 江若琏 周建军 文博 韩平 谢自力 张荣 郑有炓 |
| |
| 作者单位： | DepartmentofPhysicsandJiangsuProvincialKeyLaboratoryofPhotonicandElectronicMaterialsScienceandTechnology,NanjingUniversity,Nanjing210093 |
| |
| 摘 要： | The energy band diagram and charge distribution of the unintentional doped AIGaN/GaN/AIGaN/GaN double heterostructure were obtained by self-consistent Poisson Schroedinger calculations. The severe band tilting and high two-dimensional electron gas (2DEG) density mainly attribute to the large internal polarization intensity,which is c/ose to a linear function orAl composition. The influence orAl composition is investigated. The results show that band tilting enlarges and 2DEG gains with AI composition, and two-dimensional hole gas occurs when AI composition reaches a certain extent. The influence orAl composition and two-dimensional hole gas (2DHG)on devices is discussed.
|
| 关 键 词： | 能带图 电荷分布 双重异结构 自相容泊松-施荣丁格尔计算 氮化镓 |
| 本文献已被 维普 等数据库收录！ |
|
