| Surface Properties of Unintentionally Doped GaN Film and Its Contact Behaviour with Ni／Cr／Au Compound Metals |
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| 引用本文： | 苑进社,陈光德,齐鸣,李爱珍,谢伦军.Surface Properties of Unintentionally Doped GaN Film and Its Contact Behaviour with Ni／Cr／Au Compound Metals[J].中国物理快报,2003,20(10):1841-1843. |
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| 作者姓名： | 苑进社 陈光德 齐鸣 李爱珍 谢伦军 |
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| 作者单位： | [1]DepartmentofAppliedPhysics,Xi‘anUniversityofTechnology,Xi’an710048 [2]DepartmentofAppliedPhysics,Xi‘anJiaotongUniversity,Xi’an710049 [3]ShanghaiInstituteofMicrosystemsandInformationTechnology,ChineseAcademyofSciences,Shanghai200050 |
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| 摘 要： | The surface properties of GaN films grown by plasma-assisted molecular beam epitaxy were investigated by using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, while the depth profile was analysed by the Ar ion sputtering method.The contaminants carbon and silicon are chiefly adsorbed onto the surface while oxygen and aluminium diffuse into the bulk to distribute in a certain depth. The mixture oxides is roughly 0.1μm in thickness. Based on the analytical results of XPS of the GaN films, the Ni/Cr/Au interdigital metal-semiconductor-metal (MSM) structure has been fabricated. It has been found that the contact behaviour of the Ni/Cr/Au/undoped GaN exhibits a linear I-V characteristic under dark and 362-um light excitation without annealing treatment. The lower resistance of the MSM structure has also been observed.
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| 关 键 词： | GaN薄膜 掺杂 氮化镓薄膜 半导体 接触行为 Ni／Cr／Au复合材料 光电材料 表面性质 |
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