| Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy ＊ |
| |
| 引用本文： | 刘晓峻,守友浩.Electronic State of Bismuth in BaBiO3 up to 9 GPa Investigated by Optical Spectroscopy ＊[J].中国物理快报,2003,20(11):2027-2029. |
| |
| 作者姓名： | 刘晓峻 守友浩 |
| |
| 作者单位： | [1]LaboratoryofModernAcousticsandInstituteofAcoustics,NanjingUniversity,Nanjing210093 [2]DepartmentofAppliedPhysics,NagoyaUniversity,Nagoya464-8601,Japan |
| |
| 摘 要： | Effects of hydrostatic pressure on the mixed-valence (MV) bismuth complex BaBiO3 have been investigated up to ～9 GPa by means of high-pressure Raman scattering and absorption spectra at 300 K. The pressure-induced hardeuing behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the single-valence (SV) phase change cannot occur. Investigation of absorption spectra with pressure shows the enhanced optical gat Egap, which further indicates the remained MV state of Bi ions.
|
| 关 键 词： | 电子态 BaBiO3 铋酸钡 光谱 液压效应 高压拉曼散射谱 吸收谱 电子带 混合价态 相变 |
| 本文献已被 维普 等数据库收录！ |
|
