| Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition |
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| 作者姓名： | 陆羽 杨志坚 潘尧波 徐科 胡晓东 章蓓 张国义 |
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| 作者单位： | School of Physics and State Key Laboratory for Mesoscopic Physics, Research Center for Wide Gap Semiconductor, Peking University 100871 |
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| 基金项目： | Supported by the National High Technology Programme of China under Grant Nos 2001AA313110, 2001AA313060 and 2001A313140, Beijing City Science and Technology Project （H030430020230）, the National Natural Science Foundation of China under Grant Nos 60077022, 60276034 and 50228202, and the 0pening Project of the State Key Laboratory for Integrated 0ptoelectronics. |
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| 摘 要： | The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes （LEDs） grown by metalorganic chemical vapour deposition is investigated by using photoluminescence （PL） and highresolution x-ray diffraction. The full width at half maximum of PL of A1 doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.
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| 关 键 词： | 铝掺杂 量子阱 光发射二极管 化学气相沉积 |
| 收稿时间： | 2005-08-22 |
| 修稿时间： | 2005-08-22 |
Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition |
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| LU Yu, YANG Zhi-Jian, PAN Yao-Bo, XU Ke, HU Xiao-Dong, ZHANG Bei, ZHANG Guo-Yi.Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition[J].Chinese Physics Letters,2006,23(1):256-258. |
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| Authors: | LU Yu YANG Zhi-Jian PAN Yao-Bo XU Ke HU Xiao-Dong ZHANG Bei ZHANG Guo-Yi |
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