Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method |
| |
| Authors: | SU Xin-Yan HAN Yan WANG Jian YAO Jin-Jie |
| |
| Affiliation: | National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051 |
| |
| Abstract: | Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed. |
| |
| Keywords: | 71 10 Ay 71 10 Li 71 15 Nc |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
|
点击此处可从《中国物理快报》下载免费的PDF全文 |
