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Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube—Silicon Nanowire Composite Arrays
引用本文:李梦轲,郭新勇,等.Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube—Silicon Nanowire Composite Arrays[J].中国物理快报,2002,19(11):1703-1706.
作者姓名:李梦轲  郭新勇
作者单位:[1]CollegeofPhysicsandElectronicEngineering,NorthwestNormalUniversity,Lanzhou730070;DepartmentofChemistry,LanzhouUniversity,Lanzhou730000 [2]KeyLaboratoryofLubricationandFunctionalMat,NorthwestNormalUniversity,Lanzhou730070;DepartmentofChemistry,LanzhouUniversity,Lanzhou730000
摘    要:Composite arrays of multi-wall carbon nanotubes(MWNTs)and silicon nanowires(SiNWs) are fabricated by means of the chemical vapour deposition method in porous anodic aluminium oxide(AAO) templates.The results of the scanning electron microscopy.high-resolution transmission electron microscopy.and transmission electron microscopy have shown that SiNWs are successful nested or filled in the hollow cavities of synthesized MWNT arrays in AAO templates to form MWNT-SiNW composite arrays.The photoluminescence(PL) intensity degradation and a blueshift of PL peak position,usually created from the chemical instability of the SiNW surfaces,are decreased and eliminated clearly in the composite arrays.The composite arrays of MWNTs-SiNWs exhibit more enhanced intensity and stability of PL performance than the SiNW arrays deposited in AAO templates.

关 键 词:硅纳米导线  碳纳米管  合成阵列  光致发光特性
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