| Two-Step Growth of MgO Films on Sapphire （0001） Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy |
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| 引用本文： | 梅增霞,杜小龙,曾兆权,郭阳,王健,贾金锋,薛其坤.Two-Step Growth of MgO Films on Sapphire （0001） Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J].中国物理快报,2004,21(2):410-413. |
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| 作者姓名： | 梅增霞 杜小龙 曾兆权 郭阳 王健 贾金锋 薛其坤 |
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| 作者单位： | StateKeyLaboratoryforSurfaceScience,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 |
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| 摘 要： | We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy.A two-step method,i.e.high temperature epilayer growth after low-temperature buffer layer growth,was adopted to obtain the single crystal MgO film.The epitaxial orientation between the MgO epilayer and the sapphire (0001) substrate was studied by using in situ reflection high energy electron diffraction and ex situ x-ray diffraction,and it is found that the MgO film grows with 111] orientation.The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy.
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