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Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
引用本文:吴东海,牛智川,张石勇,倪海桥,贺振宏,赵欢,彭红玲,杨晓红,韩勤,吴荣汉.Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy[J].中国物理快报,2006,23(4):1005-1008.
作者姓名:吴东海  牛智川  张石勇  倪海桥  贺振宏  赵欢  彭红玲  杨晓红  韩勤  吴荣汉
作者单位:State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
基金项目:Supported by the National Natural Science Foundation of China under Grant 90201026 and 60137020, the Special Funds for Major State Basic Projects of China, the National High Technology Research and Development Programme of China.
摘    要:High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy, The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31 μm.

关 键 词:生长参数  频率射电等离子体氮源  扩展发射波长  量子阱  分子束外延  晶体学
收稿时间:2005-11-29
修稿时间:2005-11-29
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