| Influences of Annealing on the Opto—electronic Properties of ZnO Films Grown by Plasma—Enhanced MOCVD |
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| 引用本文： | 王金忠,刘翔,等.Influences of Annealing on the Opto—electronic Properties of ZnO Films Grown by Plasma—Enhanced MOCVD[J].中国物理快报,2002,19(4):581-583. |
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| 作者姓名： | 王金忠 刘翔 |
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| 作者单位： | [1]DepartmentofElectronicEngineeringandKeyLaboratoryonIntegratedPhotoelectronics,JilinUniversity,Changchun130023 [2]MaterialResearchCenter,NorthwesternUniversity,Evanston,Illinois,USA |
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| 摘 要： | ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition.The samples are then annealed at a higher temperature.The resistivity,concentration of electron,mobility and optically pumped threshold of both as-grown and annealed films are investigated.Furthermore,their structural and optical properties are also examined with x-ray diffraction,emission spectra and optical transmission spectra.The results indicate that the quality of ZnO thin films can be improved by annealing.
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| 关 键 词： | ZnO薄膜 热处理 光电特性 等离子体增强MOCVD |
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