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Structural and Electrical Characteristics of Pb(Zr0.53,Ti0.47)O3 Thin Films Deposited on Si (100) Substrates
引用本文:陈斌,杨浩,苗君,赵力,许波,董晓莉,曹立新,邱祥冈,赵柏儒.Structural and Electrical Characteristics of Pb(Zr0.53,Ti0.47)O3 Thin Films Deposited on Si (100) Substrates[J].中国物理快报,2005,22(3):697-700.
作者姓名:陈斌  杨浩  苗君  赵力  许波  董晓莉  曹立新  邱祥冈  赵柏儒
作者单位:NationalLaboratoryforSuperconductivity,InstituteofPhysics,ChineseAcademyofSciences,P0Box603,Beijing100080
摘    要:Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.

关 键 词:薄膜沉降  亚态硅  电子特征    结构排列
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