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Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapour Deposition
引用本文:胡桂青,孔翔,万里,王乙潜,段晓峰,陆沅,刘祥林.Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapour Deposition[J].中国物理快报,2003,20(10):1811-1814.
作者姓名:胡桂青  孔翔  万里  王乙潜  段晓峰  陆沅  刘祥林
作者单位:[1]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysicsandCenterforCondensedMatterPhysics,ChineseAcademyofSciences,POBox603,Beijing100080 [2]LaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductors~Ch/neseAcademyofSciences,POBox912,Beijing100083
摘    要:We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1 Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.

关 键 词:氮化镓薄膜  硅衬底  GaN薄膜  Si(111)  金属有机化学气相沉积  半导体材料  缺陷  薄膜生长
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