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MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films
作者姓名:李亮  张荣  谢自力  张禹  修向前  刘斌  陈琳  俞慧强  韩平  龚海梅  郑有炓
作者单位:[1]Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 [2]Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing 100083 [3]Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
基金项目:Supported by the Special Fund for Major State Basic Research Project of China under Grant Nos 2006CB604905 and 2006CB604907, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Great Fund of Ministry of Education of China (10416), the Research Fund for the Doctoral Programme of Higher Education of China (20050284004), and the Natural Science Foundation of Jiangsu Province (BK2005210, BK2006126).
摘    要:We study the growth of AlxGa1-x N epilayers on (0001) sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium (TMGa), we obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers (x =0- 1) are investigated by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). It is found that a two-direction growth appears along the c-axis and the (1011) directions for x ≥ 0.45. From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility orAl adatoms can induce the formation of (1011) grains.

关 键 词:AlxGa1-xN  薄膜  取向附生  MOCVD
收稿时间:2007-1-28
修稿时间:2007-01-28

MOCVD Growth and Characterization of Epitaxial AlxGa1-x N Films
LI Liang,ZHANG Rong,XIE Zi-Li,ZHANG Yu,XIU Xiang-Qian,LIU Bin,CHEN Lin,YU Hui-Qiang,HAN Ping,GONG Hai-Mei,ZHENG You-Dou.MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films[J].Chinese Physics Letters,2007,24(5):1393-1396.
Authors:LI Liang  ZHANG Rong  XIE Zi-Li  ZHANG Yu  XIU Xiang-Qian  LIU Bin  CHEN Lin  YU Hui-Qiang  HAN Ping  GONG Hai-Mei  ZHENG You-Dou
Affiliation:1Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093; 2Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing 100083 ;3 Sheanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
Abstract:
Keywords:81  15  Gh  61  66  Dk  78  30  Ly  61  10  Nz
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