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High-Reflectivity A1GaN/A1N Distributed Bragg Reflector in Ultraviolet Region
作者姓名:姬小利  江若琏  谢自力  刘斌  周建军  李亮  韩平  张荣  郑有炓  龚海梅
作者单位:[1]Department of Physics, Nanjing University, Nanjing 210093 [2]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093 [3]Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
基金项目:Supported by Special Funds for Major State Basic Research Project of China under Grant No 2006CB6049, and the National Natural Science Foundation of China under Grant Nos 60476030 and 60676057.
摘    要:Thirty-pair Alo.3 Gao.T N/A1N distributed Bragg reflectors centred at 32Ohm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4 mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High refiectivity of 93% at 313nm with a bandwidth of 13nm is obtained.

关 键 词:高反射率  布拉格反射器  紫外线反射  光学
收稿时间:2006-12-25
修稿时间:2006-12-25

High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region
JI Xiao-Li,JIANG Ruo-Lian,XIE Zi-Li,LIU Bin,ZHOU Jian-Jun,LI Liang,HAN Ping,ZHANG Rong,ZHENG You-Dou,GONG Hai-Mei.High-Reflectivity A1GaN/A1N Distributed Bragg Reflector in Ultraviolet Region[J].Chinese Physics Letters,2007,24(6):1735-1737.
Authors:JI Xiao-Li  JIANG Ruo-Lian  XIE Zi-Li  LIU Bin  ZHOU Jian-Jun  LI Liang  HAN Ping  ZHANG Rong  ZHENG You-Dou  GONG Hai-Mei
Affiliation:1Department of Physics, Nanjing University, Nanjing 2100932 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 2100933 Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
Abstract:Thirty-pair Al0.3 Ga 0.7 N/AlN distributed Bragg reflectors centred at 320nm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High reflectivity of 93% at 313nm with a bandwidth of 13nm is obtained.
Keywords:78  66  Fd  81  15  Gh  68  55  -a
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