首页 | 官方网站   微博 | 高级检索  
     

Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals
作者姓名:刘宏德  孔勇发  胡茜  吴日雯  王文杰  李晓春  陈绍林  刘士国  许京军
作者单位:The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457
基金项目:Supported by the National Natural Science Foundation of China under Grant No 60578019, the Research Fund for Changjiang Scholars, and Innovative Research Team in University of China
摘    要:

关 键 词:非线性光学  光学感应      铌酸盐  晶体
收稿时间:2006-11-16
修稿时间:2006-11-16

Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals
LIU Hong-De,KONG Yong-Fa,HU Qian,WU Ri-Wen,WANG Wen-Jie,LI Xiao-Chun,CHEN Shao-Lin,LIU Shi-Guo,XU Jing-Jun.Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals[J].Chinese Physics Letters,2007,24(6):1720-1723.
Authors:LIU Hong-De  KONG Yong-Fa  HU Qian  WU Ri-Wen  WANG Wen-Jie  LI Xiao-Chun  CHEN Shao-Lin  LIU Shi-Guo  XU Jing-Jun
Affiliation:The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education
Abstract:We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.
Keywords:77  80  Dj  77  80  Fm  77  84  Dy
本文献已被 维普 等数据库收录!
点击此处可从《中国物理快报》浏览原始摘要信息
点击此处可从《中国物理快报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号