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Effect of Substrate Bias on Microstructures of Zirconia Thin Films Deposited by Cathodic Vacuum Arc
作者姓名:李向周  张先徽  何平  牛二武  夏远宇  黄骏  冯克成  杨思泽
作者单位:[1]College of Science, Changchun University of Science and Technology, Changchun 130022 [2]lnstitute of Physic, Chinese Academy of Sciences, Beijing 100080 [3]College of Physical Science and Technology, Yunnan University, Kunming 650091
摘    要:Zirconium oxide (Zr02) thin films are deposited at room temperature by cathodic arc at substrate biases of 0 V, -60 V and -120 V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin films are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS) as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0 V to -120 V, the zirconium oxide thin film grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the (-111) and (-222) directions at -60 V and finally along nearly one observed preferred (002) direction under -120 V. In addition, the variations of morphology with bias voltage are correlated to changes of the film structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under -120 V bias.

关 键 词:衬底偏置  阴极射线  弧光谱  光学
收稿时间:2007-3-9
修稿时间:2007-03-09

Effect of Substrate Bias on Microstructures of Zirconia Thin Films Deposited by Cathodic Vacuum Arc
LI Xiang-Zhou,ZHANG Xian-Hui,HE Ping,NIU Er-Wu,XIA Yuan-Yu,HUANG Jun,FENG Ke-Cheng,YANG Si-Ze.Effect of Substrate Bias on Microstructures of Zirconia Thin Films Deposited by Cathodic Vacuum Arc[J].Chinese Physics Letters,2007,24(6):1633-1636.
Authors:LI Xiang-Zhou  ZHANG Xian-Hui  HE Ping  NIU Er-Wu  XIA Yuan-Yu  HUANG Jun  FENG Ke-Cheng  YANG Si-Ze
Affiliation:College of Science, Changchun University of Science and Technology, Changchun 130022Institute of Physic, Chinese Academy of Sciences, Beijing 100080 College of Physical Science and Technology, Yunnan University, Kunming650091
Abstract:Zirconium oxide (ZrO2) thin films are deposited at room temperature by cathodic arc at substrate biases of 0V, -60V and -120V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin films are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS) as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0V to -120V, the zirconium oxide thin film grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the (-111) and (-222) directions at -60V and finally along nearly one observed preferred (002) direction under -120V. In addition, the variations of morphology with bias voltage are correlated to changes of the film structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under -120V bias.
Keywords:52  77  -j  52  75  -d  61  82  Bg
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