| Influence of Thickness of Field Emission Characteristics of Nanometre Boron Nitride Thin Films |
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| 作者姓名： | GUGuang-Rui LIYing-Ai TAOYan-Chun HEZhi LIJun-Jie YINHong LIWei-Qing ZHAOYong-Nian |
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| 作者单位： | [1]NationalKeyLaboratoryofSuperhardMaterials,JilinUniversity,Changchun130023 [2]KeyLaboratoryforSupermolecularStructureandSpectroscopy,JilinUniversity,Changchun130023 |
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| 摘 要： | Nanometre boron nitride (BN) thin films with various thickness (54-135nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11V/μm and the highest emission current density of 240μA/cm^2 at an electric field of 23V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.
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| 关 键 词： | 纳米硼氮化物薄膜 光学性质 半导体薄膜厚度 场致发射特性 磁控溅射沉积 BN薄膜 电学性质 |
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