| Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces |
| |
| 引用本文： | 贾瑜,马丙现,姚乾凯,唐明生.Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces[J].中国物理 B,2002,11(1):58-65. |
| |
| 作者姓名： | 贾瑜 马丙现 姚乾凯 唐明生 |
| |
| 作者单位： | (1)Fundamental and Applied Science Research Institute of Henan, Zhengzhou 450052, China; (2)State Key Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China; (3)State Key Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China; Fundamental and Applied Science Research Institute of Henan, Zhengzhou 450052, China |
| |
| 基金项目： | Project supported by the Natural Science Foundation of the Education Commission of Henan Province (Grant No. 1999140003), and the Natural Science Foundation of Henan Province, China (Grant No. 99042300). |
| |
| 摘 要： | We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.
|
| 关 键 词： | Ⅲ－V化合物半导体 电子态 计算 |
| 收稿时间： | 2001-04-23 |
| 修稿时间： | 9/5/2001 12:00:00 AM |
Tight-binding calculation of the electronic states of bulk-terminated GaAs(311)A and B surfaces |
| |
| Jia Yu,Ma Bing-Xian,Yao Qian-Kai and Tang Ming-Sheng.Tight-binding calculation of the electronic states of bulk-terminated GaAs(311)A and B surfaces[J].Chinese Physics B,2002,11(1):58-65. |
| |
| Authors: | Jia Yu Ma Bing-Xian Yao Qian-Kai and Tang Ming-Sheng |
| |
| Affiliation: | State Key Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China; Fundamental and Applied Science Research Institute of Henan, Zhengzhou 450052, China |
| |
| Abstract: | We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded. |
| |
| Keywords: | tight-binding calculation high-index crystal surface surface states resonance states |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
