Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation |
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| Authors: | Kong Ling-Gang Liu Xiao-Yan Du Gang Wang Yi Kang Jin-Feng and Han Ru-Qi |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | We develop a Monte Carlo (MC) tool incorporated with the three-subband
approximation model to investigate the in-plane spin-polarized transport in
GaAs/GaAlAs quantum well. Using the tool, the effects of the electron
occupation of higher subbands and the intersubband scattering on the spin
dephasing have been studied. Compared with the corresponding results of the
simple one-subband approximation model, the spin
dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at
300K by the MC tool incorporated with the three-subband approximation model,
indicating that the three-subband approximation model predicts significantly
shorter spin dephasing length with temperature increasing. Our simulation
results suggest that the effects of the electron occupation of higher
subbands and the intersubband scattering on the spin-dependent transport of
GaAs 2-dimensional electron gas need to be considered when the driving
electric field exceeds the moderate value and the lattice temperature is
above 100K. The simulation by using the MC tool incorporated with the
three-subband approximation
model also indicates that, under a certain driving electric field and
lattice temperature, larger channel widths cause spins to be depolarized faster.
Ranges of the three components of the spins are different for three
different injected spin polarizations due to the anisotropy of spin--orbit
interaction. |
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| Keywords: | Monte Carlo spin dephasing spin-polarized transport three-subband approximation model |
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