| 双极晶体管负载瞬态辐照毁伤效应 |
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| 引用本文： | 赵墨,胡淑玲,申胜平,吴伟,程引会,李进玺,马良,郭景海.双极晶体管负载瞬态辐照毁伤效应[J].强激光与粒子束,2014,26(7):074002. |
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| 作者姓名： | 赵墨 胡淑玲 申胜平 吴伟 程引会 李进玺 马良 郭景海 |
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| 作者单位： | 1.航天航空学院 强度与振动国家重点实验室 西安交通大学, 西安 71 0049; |
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| 摘 要： | 利用有源传输线模型与漂移-扩散模型的耦合计算模型,对在瞬态X射线辐照下电缆末端典型N+-p-n-N+结构的双极晶体管负载的毁伤效应与规律进行研究,通过分析双极晶体管内部晶格温度分布,判定是否处于毁伤状态,总结双极晶体管烧毁时间和烧毁所需能量与脉冲X射线脉冲宽度和注量之间的关系。结果表明:随着脉冲X射线脉宽增加,双极晶体管烧毁能量变化较小,烧毁时间逐渐增加;随着注量增加,烧毁时间逐渐降低,在5.86J/cm2以下时,烧毁所需能量基本相同,之后呈指数逐渐增加,并通过曲线拟合得到损伤规律的经验公式。
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| 关 键 词： | 双极晶体管 毁伤效应 脉宽 注量 烧毁点 |
| 收稿时间： | 2014/1/26 |
Transient radiation damage effect of bipolar transistor load |
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| Affiliation: | 1.State Key Laboratory of Mechanical Structure Strength and Vibration Xi’an Jiaotong University,Xi’an 710049,China;2.Northwest Institute of Nuclear Technology,P.O.Box 69-20,Xi’an 710024,China |
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| Abstract: | Using the transmission line and drift diffusion coupling model (TLM-DDM), this paper analyzes the damage effect and mechanism of the silicon bipolar transistor induced by the cable under the X-ray pulse. The result shows that the damage effect can be decided by the lattice temperature of the bipolar transistor, and the burnout point appears first near the n-N+ interface above the center of the collector region. The paper also describes the relationships of the damage energy and burnout time with the X-ray pulse width and fluence in the curve fitting. When the pulse width of the X-ray increases, the damage energy is almost unchanged and the burnout time increases gradually. The burnout time reduces as the X-ray fluence increases, and the damage energy increases after the X-ray fluence exceeds 5.86 J/cm2. |
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| Keywords: | bipolar transistor damage effect pulse width fluence burnout point |
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