| 基于横向热流抑制的半导体激光芯片封装实验研究 |
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| 引用本文： | 谢鹏飞,雷军,吕文强,高松信,王昭,曹礼强,王丞乾.基于横向热流抑制的半导体激光芯片封装实验研究[J].强激光与粒子束,2021,33(2):021003-1-021003-5. |
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| 作者姓名： | 谢鹏飞 雷军 吕文强 高松信 王昭 曹礼强 王丞乾 |
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| 作者单位： | 1.中国工程物理研究院 高能激光科学与技术重点实验室，四川 绵阳 621900 |
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| 基金项目： | 国家重点研发计划项目（2018YFB1107302） |
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| 摘 要： | 为降低半导体激光芯片的慢轴远场发散角，提高其慢轴方向的光束质量，设计了横向热流抑制的封装结构。利用热沉间的物理隔离，削弱了半导体激光芯片慢轴方向上的温度梯度，有效降低了半导体激光芯片慢轴方向的发散角。采用热分析模拟了不同封装结构下芯片发光区的温度分布，并对波长915 nm的窄条宽半导体激光芯片进行封装。实验结果表明，在工作电流15 A，封装在隔离槽长4 mm，脊宽120 μm刻槽热沉上的芯片，其慢轴远场发散角由12.25°降低至10.49°，相应的光参量积（BPP）由5.344 mm·mrad 降低至4.5763 mm·mrad，慢轴方向亮度提升了约5.5%。实验结果表明，横向热流抑制的封装结构可以有效地削弱半导体激光芯片慢轴方向上由热透镜效应引起的高阶模激射，从而降低其慢轴远场发散角。
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| 关 键 词： | 半导体激光器 慢轴发散角 封装结构 横向热流抑制 |
| 收稿时间： | 2020-08-18 |
Experimental investigation of the package of diode laser chip based on lateral heat flow suppression |
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| Affiliation: | 1.Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China2.Institute of Applied Electronics, CAEP, Mianyang 621900, China |
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| Abstract: | To improve slow axis beam quality of diode laser (LD) and decrease slow axis divergence angle, a new package with lateral heat flow suppression was designed utilizing the difference in thermal conductivity between air and heat sink. The finite element analysis software was used to analyze the temperature distribution with lateral flow suppression package. It is shown that diode laser chip soldered on trough heat sink with width W=120 μm and length L=4000 μm can reduce slow axis divergence angle about 14%, from 12.25° to 10.49°, when working current was 15A. Correspondingly, beam parameter product (BPP) can reduce from 5.344 mm·mrad to 4.5763 mm·mrad and the brightness of slow axis increased about 5.5% than before. According to the result, the lateral flow suppression package can weaken higher order mode caused by thermal lens effect of diode laser so that decrease slow axis divergence angle effectively. |
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