| S波段3 GW 相对论速调管放大器的设计 |
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| 引用本文： | 陈永东,金晓,李正红,吴洋,黄华.S波段3 GW 相对论速调管放大器的设计[J].强激光与粒子束,2012,24(9):2151-2154. |
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| 作者姓名： | 陈永东 金晓 李正红 吴洋 黄华 |
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| 作者单位： | 1.中国工程物理研究院 研究生部, 北京 1 00086; |
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| 摘 要： | 利用速调管放大器中间腔可以提高器件放大增益，并达到降低微波注入功率的要求，同时针对高功率微波相对论速调管放大器的特点，建立了一个带有两个中间腔的S波段相对论速调管放大器，采用特殊结构克服了多个中间腔引入的高次模影响，模拟上实现了在kW量级微波注入条件下，基波电流调制深度达到80%，输出微波3.3 GW。
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| 关 键 词： | 高功率微波 相对论速调管放大器 高增益 粒子模拟 |
| 收稿时间： | 2011/9/8 |
Theoretical design of 3 GW S-band relativistic klystron amplifier |
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| Chen Yongdong,Jin Xiao,Li Zhenghong,Wu Yang,Huang Hua.Theoretical design of 3 GW S-band relativistic klystron amplifier[J].High Power Laser and Particle Beams,2012,24(9):2151-2154. |
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| Authors: | Chen Yongdong Jin Xiao Li Zhenghong Wu Yang Huang Hua |
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| Affiliation: | 1.Graduate School of China Academy of Engineering Physics,Beijing 100086,China;2.Laboratory of High Power Microwave Technology,Institute of Applied Electronics,CAEP,P.O.Box 919-1014,Mianyang,621900,China;3.Sichuan University of Science and Engineering,Zigong 643000,China;4.Tsinghua University,Beijing 100084,China |
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| Abstract: | The introduction of bunching cavities can significantly increase the gain of relativistic klystron amplifier, and correspondingly the power of the seeding microwave can be reduced to a very low level. Though higher gain can be obtained with more bunching cavities, the self-exciting problem will seriously disturb the working mode in the device. A special structure is introduced to deal with such problem. Based on the engineering requirement, a S-band of 3 GW relativistic klystron amplifier is designed with the seeding power 20 kW. In the simulation, the fundamental current modulation depth is 80% and the output microwave power reaches 3.3 GW with the seeding power of kilowatts. |
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| Keywords: | high power microwave relativistic klystron amplifier high gain PIC simulation |
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