| 真空中电子辐照下聚四氟乙烯沿面闪络电压特性 |
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| 引用本文： | 范亚杰,张希军,孙永卫,周立栋.真空中电子辐照下聚四氟乙烯沿面闪络电压特性[J].强激光与粒子束,2018,30(11):114002-1-114002-6. |
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| 作者姓名： | 范亚杰 张希军 孙永卫 周立栋 |
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| 作者单位： | 陆军工程大学石家庄校区 电磁环境效应国家级重点实验室, 石家庄 050003 |
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| 基金项目： | 装备预研基金项目重点实验室基金项目61422050102162205001装备预研基金项目61402090201 |
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| 摘 要： | 为了研究聚四氟乙烯材料(PTFE)在空间粒子环境中放电规律及其影响因素，通过实验获得了高真空低能电子辐照下PTFE高压直流沿面闪络电压，并采用等温电位衰减法测试了PTEE在辐照前及辐照后的陷阱密度，分析了影响PTEE沿面闪络电压的因素。研究结果表明:相比于无辐照时PTFE沿面闪络电压，当辐照电子能量为19~25 keV时，闪络电压明显更高；在电子束流密度不变的情况下，电子能量越高，材料表面正电荷密度越小，陷阱密度与电导率越大，电场畸形程度越小，因此闪络电压升高；当电子能量一定时，束流密度越高，初始电子数量和二次电子数量越多，因此闪络电压降低。
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| 关 键 词： | 聚四氟乙烯 电子辐照 高压直流 沿面闪络 电子能量 束流密度 |
| 收稿时间： | 2018-05-07 |
Surface flashover voltage characteristics of polytetrafluoroethylene under electron irradiation in vacuum |
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| Affiliation: | National Key Laboratory on Electromagnetic Environment Effects, Shijiazhuang Campus of Army Engineering University, Shijiazhuang 050003, China |
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| Abstract: | Surface discharge effect of spacecraft insulating material in space irradiation environment is one of the main factors that threaten spacecraft safety. To investigate the pattern and influencing factors of the electrostatic discharge of polytetrafluoroethylene (PTFE) in complex ionization environment, the flashover voltage of PTFE under high voltage direct current (DC) in high vacuum and during low energy electron irradiation were experimentally obtained, the trap density before and after irradiation was tested by isothermal surface potential decay, and the influencing factors of flashover voltage were analyzed. The results show that the surface flashover voltage of PTFE under the irradiation with electron energy of 19~25keV is higher than that under no irradiation. Higher electron energy leads to smaller positive charge density on surface of PTFE and larger trap density, decreasing deformity of surface electric field, increasing the flashover voltage finally. On the condition that electron energy remains the same, the flashover voltage of PTFE would be lower with the increasing electron beam density, number of initial electrons and number of secondary electrons. |
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