| 光导开关Blumlein型脉冲网络电压传输效率 |
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| 引用本文： | 马勋,邓建军,刘金锋,刘宏伟,李洪涛.光导开关Blumlein型脉冲网络电压传输效率[J].强激光与粒子束,2012,24(10):2502-2506. |
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| 作者姓名： | 马勋 邓建军 刘金锋 刘宏伟 李洪涛 |
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| 作者单位： | 1.中国工程物理研究院 流体物理研究所, 四川 绵阳 621 900; |
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| 基金项目： | 国家自然科学基金项目(50837004); 国家自然科学基金青年基金项目(51007085); 中国工程物理研究院科学发展基金项目(2012B0402054，2011B0402010); 中国工程物理研究院流体物理研究所发展基金项目(SFZ20110202) |
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| 摘 要： | 为了在高阻负载上获得高效率的重复频率平顶高压脉冲输出，开展了影响基于光导开关的Blumlein型脉冲形成网络电压传输效率因素的初步实验研究。以陶瓷电容、铝条和GaAs光导开关构成全固态Blumlein型脉冲形成网络（BPFN），采用气体间隙进行了设计参数的验证实验，在匹配负载上研究了光导开关工作场强、激光触发能量与BPFN电压转换效率的关系。设计的BPFN阻抗7.8 ，电长度32.6 ns，实验表明光导开关较高的导通电阻是影响PCSS-BPFN电压传输效率的主要因素。当触发激光能量30.4 mJ，工作场强25.1 kV/cm时，获得电压效率83.2%，相应最小导通电阻1.89 ;在触发激光能量3.5 mJ时，为了使阻抗为7.8 的BPFN在匹配负载上达到75%以上电压传输效率，应至少使光导开关工作场强为25.1 kV/cm，相应最小导通电阻2.88 。
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| 关 键 词： | Blumlein型脉冲形成网络 光导开关 电压传输效率 非线性模式 |
| 收稿时间： | 2012/5/4 |
Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches |
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| Ma Xun
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Den Jianjun
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Liu Jinfeng
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Liu Hongwei
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Li Hongtao.Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches[J].High Power Laser and Particle Beams,2012,24(10):2502-2506. |
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| Authors: | Ma Xun Den Jianjun Liu Jinfeng Liu Hongwei Li Hongtao |
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| Affiliation: | 1.Institute of Fluid Physics,CAEP,P.O.Box 919-108,Mianyang 621900,China;2.Pulsed Power Laboratory,CAEP,P.O.Box 919-108,Mianyang 621900,China |
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| Abstract: | The factors affecting the voltage transfer efficiency of Blumlein pulse forming networks (PFNs) based on photoconductive semiconductor switch (PCSS) were preliminarily studied in experiment to get rectangle high voltage pulses on high impedance loads with high energy transfer efficiency and high repetition rate. The Blumlein-PFN is composed of the ceramic capacitor, aluminum strip and GaAs-PCSS.The Blumlein-PFN’s impedance is 7.8 Ω with an electric length of 32.6 ns. The relations of voltage transfer efficiency to PCSS electric field and laser energy were studied on a matched load. Experiment results shows that high on-resistance is the main factor affecting the voltage transfer efficiency. When the electric field is 25.1 kV/cm, the efficiency is 75.6% with an on-resistance of 2.88 Ω at a laser energy of 3.5 mJ and 83.2% with an on-resistance of 1.89 Ω at a laser energy of 30.4 mJ. |
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| Keywords: | Blumlein-pulse forming network photoconductive semiconductor switch voltage transfer efficiency nonlinear mode |
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