| 横向电容自耦式紫外预电离开关 |
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| 引用本文： | 陈瀚,杨汉武,张自成,张江华,左扬波.横向电容自耦式紫外预电离开关[J].强激光与粒子束,2013,25(8):2035-2039. |
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| 作者姓名： | 陈瀚 杨汉武 张自成 张江华 左扬波 |
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| 作者单位： | 1.解放军后勤工程学院 基础部, 重庆 401 31 1 ; |
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| 摘 要： | 对紫外预电离技术在气体开关方面的影响进行原理研究，分析并实验验证电容并联的横向辅助电极对主开关进行紫外预电离的可行性。辅助电极击穿释放紫外光，通过光电效应在主开关表面产生初始电子，以减小主开关的击穿电压离散度。预电离效果与辅助电极击穿导通电流的峰值强度、辅助电极两端的电压以及预电离储能电容有关，优化这些参数可以提高光照强度来增强预电离效果。实验结果表明:当主开关内部充满氮气、分压电容为pF量级时，距离主电极15 cm远的横向辅助电极可以产生预电离效应。在此基础上，提出一种新型的横向型电容自耦式紫外预电离开关的设计。
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| 关 键 词： | 自击穿开关 横向紫外照射 紫外光预电离 低离散度 电容耦合 |
| 收稿时间： | 2012-11-02; |
Transverse capacitance coupling UV pre-ionization switch |
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| Chen Han,Yang Hanwu,Zhang Zicheng,Zhang Jianghua,Zuo Yangbo.Transverse capacitance coupling UV pre-ionization switch[J].High Power Laser and Particle Beams,2013,25(8):2035-2039. |
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| Authors: | Chen Han Yang Hanwu Zhang Zicheng Zhang Jianghua Zuo Yangbo |
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| Affiliation: | 1.Basic Department,Chongqing Institute of Logistics Engineering of PLA,Chongqing 401311,China; 2.College of Opto-electric Science and Engineering,National University of Defense Technology,Changsha 410073,China |
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| Abstract: | This paper studies the effect of the UV illumination technology on gas switch in principle, analyzing and approving the feasibility of UV pre-ionization to the main switch from transverse capacitance coupling auxiliary spark. UV illumination from auxiliary gap makes initial electrons release from the cathode by photoemission, which can reduce the scatter of breakdown voltage effectively. The factors which affect the intensity of UV pre-ionization are analyzed, such as breakdown current peak, voltage and storage capacity of auxiliary gap. The experiment results show that the UV pre-ionization from transverse auxiliary gap with storage capacitor of pF-order which is apart from the main gap with a distance of 15 cm is feasible among nitrogen. On this basis, a new compact transverse capacity-coupling UV illumination switch is designed. |
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| Keywords: | transverse UV illumination UV pre-ionization low scatter capacitance coupling |
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