| 准分子激光全固态脉冲电源设计与实验研究 |
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| 引用本文： | 晏良宏,吕海兵,王海军,赵松楠,袁晓东,苗心向,郑万国.准分子激光全固态脉冲电源设计与实验研究[J].强激光与粒子束,2009,21(11):0. |
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| 作者姓名： | 晏良宏 吕海兵 王海军 赵松楠 袁晓东 苗心向 郑万国 |
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| 作者单位： | 1.中国科学院 安徽光学精密机械研究所 安徽省光子器件与材料重点实验室, 合肥 230031 |
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| 基金项目： | 国家高技术发展计划项目 |
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| 摘 要： | 针对脉冲能量5~8 mJ的ArF准分子激光器，设计了基于可控硅开关结合三级磁脉冲压缩开关的全固态脉冲电源，采用国产可控硅和磁开关材料，获得了上升时间约150 ns，电压10~14 kV，传递能量0.35~0.68 J的激励脉冲，并实现了对准分子激光器快放电激励。三级磁开关总效率35%，分析表明磁开关损耗较大主要原因为电容能量转移不充分、导线铜损及磁芯材料铁损较大，并提出了相应改进办法。
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| 关 键 词： | 准分子激光 全固态脉冲电源 磁开关 可控硅 磁脉冲压缩 |
| 收稿时间： | 1900-01-01; |
Laser-induced damage of sol-gel coating |
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| Yan Lianghong,LV Haibing,Wang Haijun,Zhao Songnan,Yuan Xiaodong,Miao Xinxiang,Zheng Wanguo.Laser-induced damage of sol-gel coating[J].High Power Laser and Particle Beams,2009,21(11):0. |
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| Authors: | Yan Lianghong LV Haibing Wang Haijun Zhao Songnan Yuan Xiaodong Miao Xinxiang Zheng Wanguo |
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| Affiliation: | 1.The Key Laboratory of Photonic Devices and Materials,Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,P.O.Box 1125,Hefei 230031,China |
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| Abstract: | Laser-induced damage of optical thin film/silica system was studied. The thin film was sol-gel derived silica an-tireflective coating, which was plated on silica substrate, and the laser with 355 nm wavelength and 6.3 ns pulse width was used in measurement. The results show that the laser induced damage threshold of the system equals to that of the silica substrate and increases with the latter's increase. The threshold of the system is 4.9 J/cm~2 when the threshold of the substrate is 4.8 J/cm~2. When the threshold of the substrate is increased to 7. 2 J/cm~2 by laser pretreatment, the system threshold increases to 7.3 J/cm~2. According to dynamic comparison, the substrate is the fragile part in the film/silica system, which is damaged first under laser irradiation, leading to the damage of the film on it. |
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| Keywords: | antireflective coating laser induced damage silica sol-gel |
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