Performance improvement of Ga N-based light-emitting diodes transferred from Si(111) substrate onto electroplating Cu submount with embedded wide p-electrodes |
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| Authors: | Liu Ming-Gang;Wang Yun-Qian;Yang Yi-Bin;Lin Xiu-Qi;Xiang Peng;Chen Wei-Jie;Han Xiao-Biao;Zang Wen-Jie;Liao Qiang;Lin Jia-Li;Luo Hui;Wu Zhi-Sheng;Liu Yang;Zhang Bai-Jun |
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| Affiliation: | Liu Ming-Gang;Wang Yun-Qian;Yang Yi-Bin;Lin Xiu-Qi;Xiang Peng;Chen Wei-Jie;Han Xiao-Biao;Zang Wen-Jie;Liao Qiang;Lin Jia-Li;Luo Hui;Wu Zhi-Sheng;Liu Yang;Zhang Bai-Jun;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University; |
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| Abstract: | Crack-free Ga N/In Ga N multiple quantum wells(MQWs) light-emitting diodes(LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer(TCL), which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si. |
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