Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect |
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| Authors: | Yuan Ji-Ren;Huang Hai-Bin;Deng Xin-Hua;Liang Xiao-Jun;Zhou Nai-Gen;Zhou Lang |
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| Affiliation: | Yuan Ji-Ren;Huang Hai-Bin;Deng Xin-Hua;Liang Xiao-Jun;Zhou Nai-Gen;Zhou Lang;Institute of Photovoltaics, Nanchang University;School of Science, Nanchang University; |
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| Abstract: | The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic(IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors. |
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