| High quality above 3-μm mid-infrared InGaAsSb/AIGaInAsSb multiple-quantum well grown by molecular beam epitaxy |
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| 引用本文： | 邢军亮,张宇,徐应强,王国伟,王娟,向伟,倪海桥,任正伟,贺振宏,牛智川.High quality above 3-μm mid-infrared InGaAsSb/AIGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J].中国物理 B,2014(1):454-457. |
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| 作者姓名： | 邢军亮 张宇 徐应强 王国伟 王娟 向伟 倪海桥 任正伟 贺振宏 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beiiin~ 100083, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant Nos. 2013CB932904, 2012CB932701,2011CB92220 l, and 2010CB327600）, the National Special Funds for the Development of Major Research Equipment and Instruments, China （Grant No. 2012YQ140005）, and the National Natural Science Foundation of China （Grant Nos. 61274013, U 1037602, and 61290303）. |
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| 摘 要： | The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well （QW） laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well （MQW） grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence （PL） property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.
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| 关 键 词： | GaSb multiple-quantum well photoluminescence |
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