Field-effect transistors based on two-dimensional materials for logic applications |
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Authors: | Wang Xin-Ran Shi Yi and Zhang Rong |
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Affiliation: | National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
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Abstract: | Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS2 , are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors. |
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Keywords: | graphene MoS2 two-dimensional (2D) materials field-effect transistors |
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