|
|||||
|
|
Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
|
| Authors: | Yun Quan-Xin Li Ming An Xia Lin Meng Liu Peng-Qiang Li Zhi-Qiang Zhang Bing-Xin Xia Yu-Xuan Zhang Hao Zhang Xing Huang Ru and Wang Yang-Yuan |
| Affiliation: | [1]State Key Laboratory of Intense Pulsed Radiation Simulation and Ett'ect, Northwest Institute of Nuclear Technology, Xi' an 710024, China h); [2]Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China; [3]State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China |
| Abstract: | germanium, roughness, interface trap density, interfacial layer thickness |
| Keywords: | single event upset total dose static random access memory imprint effect |
| 本文献已被 CNKI 维普 等数据库收录！ | |
