Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current |
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| Authors: | Xiao Wen-Bo He Xing-Dao Zhang Zhi-Min Gao Yi-Qing Liu Jiang-Tao |
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| Affiliation: | a. Key Laboratory of Nondestructive Test (Ministry of Education),Nanchang Hangkong University, Nanchang 330063, China;b. Department of Physics, Nanchang University, Nanchang 330031, China |
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| Abstract: | At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research. |
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| Keywords: | photodiode electroluminescence images electroluminescence intensity |
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