A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes |
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| Authors: | Xiong Ji-Jun Mao Hai-Yang Zhang Wen-Dong and Wang Kai-Qun |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing
100871, China; Key Laboratory of Instrumentation Science and
Dynamic Measurement of the Ministry Education, North University of China, Taiyuan 030051, China |
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| Abstract: | Resonant tunnelling diodes (RTDs) have negative differential
resistance effect, and the current--voltage characteristics change
as a function of external stress, which is regarded as
meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs
RTDs is designed and fabricated to be a four-beam-mass structure,
and an RTD-Wheatstone bridge measurement system is established to
test the basic properties of this novel accelerometer. According to
the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias
voltage of the sensor changes. The largest sensitivity of this RTD
based micro-accelerometer is 560.2025 mV/g which is about 10 times
larger than that of silicon based micro piezoresistive
accelerometer, while the smallest one is 1.49135 mV/g. |
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| Keywords: | micro-accelerometer piezoresistance effect resonant tunnelling diode (RTD) sensitivity |
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