Achieving high-performance multilayer MoSe2 photodetectors by defect engineering |
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| Affiliation: | 1.Laboratory for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China;2.Jiangsu Province Special Equipment Safety Supervision and Inspection Institute, Wuxi 214170, China;3.School of Physics, Southeast University, Nanjing 211189, China;4.Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China |
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| Abstract: | Optoelectronic properties of MoSe2 are modulated by controlled annealing in air. Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects. Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport. Furthermore, the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing. The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance. Furthermore, the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×104 A/W. |
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| Keywords: | MoSe2 oxygen defects electrical properties optoelectronic properties |
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