| Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier |
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| 作者姓名： | 宋庆文 张玉明 张义门 陈丰平 汤晓燕 |
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| 作者单位： | School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education,Xidian University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shanxi Province of China (Grant No. 2008ZDKG-30). |
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| 摘 要： | The current transport parameters of 4H-SiC merged PiN Schottky(MPS) diode are investigated in a temperature range of 300-520 K.Evaluation of the experimental current-voltage(I-V) data reveals the decrease in Schottky barrier height Φ b but an increase in ideality factor n,with temperature decreasing,which suggests the presence of an inhomogeneous Schottky barrier.The current transport behaviours are analysed in detail using the Tung’s model and the effective area of the low barrier patches is extracted.It is found that small low barrier patches,making only 4.3% of the total contact,may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV.This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality.In addition,the temperature dependence of the specific on-resistance(R on sp),T 2.14,is determined between 300 K and 520 K,which is similar to that predicted by a reduction in electron mobility.
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| 关 键 词： | 4H-SiC MPS barrier inhomogeneity specific on-resistance |
| 收稿时间： | 2010-10-24 |
Investigation of current transport parameters of Ti/4H–SiC MPS diode with inhomogeneous barrier |
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| Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Chen Feng-Ping and Tang Xiao-Yan.Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier[J].Chinese Physics B,2011,20(5):57301-057301. |
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| Authors: | Song Qing-Wen Zhang Yu-Ming Zhang Yi-Men Chen Feng-Ping and Tang Xiao-Yan |
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| Affiliation: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China |
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| Abstract: | The current transport parameters of 4H–SiC merged PiN Schottky (MPS) diode are investigated in a temperature range of 300–520 K. Evaluation of the experimental current–voltage (I–V) data reveals the decrease in Schottky barrier height Φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung's model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H–SiC interface quality. In addition, the temperature dependence of the specific on-resistance (Ron - sp), T2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility. |
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| Keywords: | 4H–SiC MPS barrier inhomogeneity specific on-resistance |
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