| Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices |
| |
| 作者姓名： | 徐忍忍 张青竹 周龙达 杨红 盖天洋 殷华湘 王文武 |
| |
| 作者单位： | 1.Integrated Circuit Advanced Process Center(ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2.Key Laboratory of Microelectronics Devices&Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;3.University of Chinese Academy of Sciences, Beijing 100049, China |
| |
| 基金项目： | the Science and Technology Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z201100004220001);the National Major Project of Science and Technology of China(Grant No.2017ZX02315001);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(Grant Nos.Y9YS05X002 and E0YS01X001). |
| |
| 摘 要： | A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.Moreover,the channel length dependence on NBTI is more serious than that on PBTI.Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is proposed.Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs.The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.
|
| 关 键 词： | bias temperature instability(BTI) channel length stress FINFET |
| 收稿时间： | 2021-05-05 |
Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices |
| |
| Ren-Ren Xu,Qing-Zhu Zhang,Long-Da Zhou,Hong Yang,Tian-Yang Gai,Hua-Xiang Yin,Wen-Wu Wang.Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices[J].Chinese Physics B,2022,31(1):17301-017301. |
| |
| Authors: | Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang |
| |
| Affiliation: | 1.Integrated Circuit Advanced Process Center(ICAC), Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2.Key Laboratory of Microelectronics Devices&Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;3.University of Chinese Academy of Sciences, Beijing 100049, China |
| |
| Abstract: | A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented. It is found while with the channel lengths shrinking from 100 nm to 30 nm, both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better. Moreover, the channel length dependence on NBTI is more serious than that on PBTI. Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device, a physical mechanism of the channel length dependence on NBTI/PBTI is proposed. Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue, while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs. The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process. |
| |
| Keywords: | bias temperature instability (BTI) channel length stress FinFET |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
