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GaN hexagonal pyramids formed by a photo-assisted chemical etching method
作者姓名:张士英  修向前  华雪梅  谢自力  刘斌  陈鹏  韩平  陆海  张荣  郑有炓
基金项目:Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255)
摘    要:A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.

关 键 词:化学刻蚀  GaN  光辅助  棱锥  蚀刻条件  光致发光光谱  溶液浓度  氮化镓

GaN hexagonal pyramids formed by a photo-assisted chemical etching method
Zhang Shi-Ying,Xiu Xiang-Qian,Hua Xue-Mei,Xie Zi-Li,Liu Bin,Chen Peng,Han Ping,Lu Hai,Zhang Rong,Zheng You-.GaN hexagonal pyramids formed by a photo-assisted chemical etching method[J].Chinese Physics B,2014(5):588-593.
Authors:Zhang Shi-Ying  Xiu Xiang-Qian  Hua Xue-Mei  Xie Zi-Li  Liu Bin  Chen Peng  Han Ping  Lu Hai  Zhang Rong  Zheng You-
Abstract:A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a convenient photo-assisted chemical(PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed analysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.
Keywords:hexagonal pyramids  GaN  photo-assisted chemical etching
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