| Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC |
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| 引用本文： | 代冲冲,刘学超,周天宇,卓世异,石彪,施尔畏.Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC[J].中国物理 B,2014(6):452-456. |
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| 作者姓名： | 代冲冲 刘学超 周天宇 卓世异 石彪 施尔畏 |
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| 基金项目： | supported by the Shanghai Rising-Star Program,China(Grant No.13QA1403800);the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002176);the Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-W10);the Industry–Academic Joint Technological Innovations Fund Project of Jiangsu Province,China(Grant No.BY2011119);the National High Technology Research and Development Program of China(Grant Nos.2013AA031603 and 2014AA032602) |
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| 摘 要： | The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.
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| 关 键 词： | 3C-SiC 退火温度 微观结构 n型 电特性 化学气相沉积 透射电子显微镜 磁控溅射法 |
Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC |
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| Abstract: | A1/3C-SiC, ohmic contact, specific contact resistance |
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| Keywords: | A1/3C-SiC ohmic contact specific contact resistance |
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