| Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure |
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| 引用本文： | 叶超,宁兆元.Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure[J].中国物理 B,2010,19(5):57701-057701. |
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| 作者姓名： | 叶超 宁兆元 |
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| 作者单位： | School of Physics Science and Technology, Jiangsu Key Laboratory of
Thin Films, Soochow University, Suzhou 215006, China;School of Physics Science and Technology, Jiangsu Key Laboratory of
Thin Films, Soochow University, Suzhou 215006, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No.~10575074). |
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| 摘 要： | This paper investigates the capacitance-voltage （C-V） characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasilox-ane DMCPS） and trifluromethane （CHF3） electron cyclotron resonance plasmas. With the CHF3/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of fiat-band voltage VFB from -6.1 V to 32.2V are obtained. The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0V.
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| 关 键 词： | 半导体结构 电压特性 电容电压 绝缘体 薄膜 金属 电子回旋共振等离子体 兴奋剂 |
| 收稿时间： | 2/4/2009 12:00:00 AM |
Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure |
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| Ye Chao and Ning Zhao-Yuan.Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure[J].Chinese Physics B,2010,19(5):57701-057701. |
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| Authors: | Ye Chao and Ning Zhao-Yuan |
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| Affiliation: | School of Physics Science and Technology, Jiangsu Key Laboratory of
Thin Films, Soochow University, Suzhou 215006, China |
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| Abstract: | This paper investigates the capacitance--voltage
($C$--$V$) characteristics of F doping SiCOH low dielectric constant
films metal--insulator--semiconductor structure. The F doping SiCOH
films are deposited by decamethylcyclopentasiloxane (DMCPS) and
trifluromethane (CHF$_{3})$ electron cyclotron resonance plasmas.
With the CHF$_{3}$/DMCPS flow rate ratio from 0 to 0.52, the
positive excursion of $C$--$V$ curves and the increase of flat-band
voltage $V_{\rm FB}$ from $-6.1$~V to 32.2~V are obtained. The
excursion of $C$--$V$ curves and the shift of $V_{\rm FB}$ are
related to the change of defects density and type at the Si/SiCOH
interface due to the decrease of Si and O concentrations, and the
increase of F concentration. At the CHF$_{3}$/DMCPS flow rate ratio
is 0.12, the compensation of F-bonding dangling bond to Si dangling
bond leads to a small $V_{\rm FB}$ of 2.0~V. |
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| Keywords: | F-SiCOH low-k dielectrics capacitance--voltage
characteristic |
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