Wet etching and passivation of GaSb-based very long wavelength infrared detectors |
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| Affiliation: | 1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO2, Al2O3, Si3N4 and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R0A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm2 at 77 K. |
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| Keywords: | InAs/GaSb/AlSb superlattice very long wavelength infrared (VLWIR) detector wet etching passivation |
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